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Liang W, Goldsman N, Mayergoyz ID, Oldiges PJ.  1997.  2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations. Electron Devices, IEEE Transactions on. 44(2):257-267.
Lin C-K, Goldsman N, Mayergoyz ID, Aronowitz S, Belova N.  1999.  Advances in spherical harmonic device modeling: calibration and nanoscale electron dynamics. Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on. :167-170.