Publications

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Liang W, Goldsman N, Mayergoyz ID, Oldiges PJ.  1997.  2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations. Electron Devices, IEEE Transactions on. 44(2):257-267.
A
Lin C-K, Goldsman N, Mayergoyz ID, Aronowitz S, Belova N.  1999.  Advances in spherical harmonic device modeling: calibration and nanoscale electron dynamics. Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on. :167-170.
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Han B, Ji L, Lee S, Miller RR, Bhattacharjee B.  2009.  Channel Access Throttling for Improving WLAN QoS. Sensor, Mesh and Ad Hoc Communications and Networks, 2009. SECON '09. 6th Annual IEEE Communications Society Conference on. :1-9.
Han B, Ji L, Lee S, Miller RR, Bhattacharjee B.  2009.  Channel Access Throttling for Overlapping BSS Management. Communications, 2009. ICC '09. IEEE International Conference on. :1-6.
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Wei Z, JaJa JF.  2011.  A Fast Algorithm for Constructing Inverted Files on Heterogeneous Platforms. Parallel Distributed Processing Symposium (IPDPS), 2011 IEEE International. :1124-1134.
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Han Z, Lin C-K, Goldsman N, Mayergoyz ID, Yu S, Stettler M.  1999.  Gate leakage current simulation by Boltzmann transport equation and its dependence on the gate oxide thickness. Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on. :247-250.
I
Gaitan M, Mayergoyz ID, Korman CE.  1990.  Investigation of the threshold voltage of MOSFETs with position and potential-dependent interface trap distributions using a fixed-point iteration method. Electron Devices, IEEE Transactions on. 37(4):1031-1038.
P
Tai G-C, Korman CE, Mayergoyz ID.  1994.  A parallel-in-time method for the transient simulation of SOI devices with drain current overshoots. Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on. 13(8):1035-1044.