Publications
2003. Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices. Solid-State Electronics. 47(11):2055-2061.
1997. 2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations. Electron Devices, IEEE Transactions on. 44(2):257-267.