%0 Journal Article %J Electron Devices, IEEE Transactions on %D 1990 %T Investigation of the threshold voltage of MOSFETs with position and potential-dependent interface trap distributions using a fixed-point iteration method %A Gaitan,M. %A Mayergoyz, Issak D %A Korman,C.E. %K boundary-value %K C-V %K carriers;insulated %K characteristics;Gaussian %K Convergence %K convergence;hot-electron %K degradation;position %K dependence;fixed-point %K dependent %K device %K distribution;potential-dependent %K distributions;simulation;threshold %K effect %K electron %K field %K gate %K interface %K iteration %K method;fixed-point %K methods;hot %K methods;semiconductor %K models; %K numerical %K of %K peak;MOSFET;energy %K problem;boundary-value %K problems;convergence %K rate;global %K states;iterative %K technique;geometric %K transistors;interface %K trap %K voltage;two-dimensional %X Simulation results are presented for a MOSFET with position- and energy- (potential-) dependent interface trap distributions that may be typical for devices subjected to interface-trap-producing processes such as hot-electron degradation. The interface-trap distribution is modeled as a Gaussian peak at a given position along the channel, and the energy dependence is derived from C-V measurements from an MOS capacitor exposed to ionizing radiation. A novel fixed-point technique is used to solve the two-dimensional boundary-value problem. The technique is shown to be globally convergent for arbitrary distributions of interface traps. A comparison of the convergence properties of the Newton and fixed-point methods is presented, and it is shown that for some important cases the Newton technique fails to converge while the fixed-point technique converges with a geometric convergence rate %B Electron Devices, IEEE Transactions on %V 37 %P 1031 - 1038 %8 1990/04// %@ 0018-9383 %G eng %N 4 %R 10.1109/16.52438