%0 Journal Article
%J Electron Devices, IEEE Transactions on
%D 1990
%T Investigation of the threshold voltage of MOSFETs with position and potential-dependent interface trap distributions using a fixed-point iteration method
%A Gaitan,M.
%A Mayergoyz, Issak D
%A Korman,C.E.
%K boundary-value
%K C-V
%K carriers;insulated
%K characteristics;Gaussian
%K Convergence
%K convergence;hot-electron
%K degradation;position
%K dependence;fixed-point
%K dependent
%K device
%K distribution;potential-dependent
%K distributions;simulation;threshold
%K effect
%K electron
%K field
%K gate
%K interface
%K iteration
%K method;fixed-point
%K methods;hot
%K methods;semiconductor
%K models;
%K numerical
%K of
%K peak;MOSFET;energy
%K problem;boundary-value
%K problems;convergence
%K rate;global
%K states;iterative
%K technique;geometric
%K transistors;interface
%K trap
%K voltage;two-dimensional
%X Simulation results are presented for a MOSFET with position- and energy- (potential-) dependent interface trap distributions that may be typical for devices subjected to interface-trap-producing processes such as hot-electron degradation. The interface-trap distribution is modeled as a Gaussian peak at a given position along the channel, and the energy dependence is derived from C-V measurements from an MOS capacitor exposed to ionizing radiation. A novel fixed-point technique is used to solve the two-dimensional boundary-value problem. The technique is shown to be globally convergent for arbitrary distributions of interface traps. A comparison of the convergence properties of the Newton and fixed-point methods is presented, and it is shown that for some important cases the Newton technique fails to converge while the fixed-point technique converges with a geometric convergence rate
%B Electron Devices, IEEE Transactions on
%V 37
%P 1031 - 1038
%8 1990/04//
%@ 0018-9383
%G eng
%N 4
%R 10.1109/16.52438