TY - JOUR T1 - Three-Dimensional Hydrodynamic Modeling of MOSFET Devices JF - VLSI Design Y1 - 1998 A1 - Kerr,Daniel C. A1 - Goldsman,Neil A1 - Mayergoyz, Issak D AB - The hydrodynamic (HD) model of semiconductor devices is solved numerically inthree-dimensions (3-D) for the MOSFET device. The numerical instabilities of the HD model are analyzed to develop a stable discretization. The formulation is stabilized by using a new, higher-order discretization for the relaxation-time approximation (RTA) term of the energy-balance (EB) equation. The developed formulation is used to model the MOSFET. VL - 6 SN - 1065-514X, 1563-5171 UR - http://www.hindawi.com/journals/vlsi/1998/060859/abs/ CP - 1-4 M3 - 10.1155/1998/60859 ER -