@conference {13192,
	title = {Pedestrian classification from moving platforms using cyclic motion pattern},
	booktitle = {Image Processing, 2005. ICIP 2005. IEEE International Conference on},
	volume = {2},
	year = {2005},
	month = {2005/09//},
	pages = {II - 854-7 - II - 854-7},
	abstract = {This paper describes an efficient pedestrian detection system for videos acquired from moving platforms. Given a detected and tracked object as a sequence of images within a bounding box, we describe the periodic signature of its motion pattern using a twin-pendulum model. Then a principle gait angle is extracted in every frame providing gait phase information. By estimating the periodicity from the phase data using a digital phase locked loop (dPLL), we quantify the cyclic pattern of the object, which helps us to continuously classify it as a pedestrian. Past approaches have used shape detectors applied to a single image or classifiers based on human body pixel oscillations, but ours is the first to integrate a global cyclic motion model and periodicity analysis. Novel contributions of this paper include: i) development of a compact shape representation of cyclic motion as a signature for a pedestrian, ii) estimation of gait period via a feedback loop module, and iii) implementation of a fast online pedestrian classification system which operates on videos acquired from moving platforms.},
	keywords = {analysis;, angle;, body, classification;, compact, cyclic, DETECTION, detection;, digital, Feedback, Gait, human, image, information;, locked, loop, loop;, loops;, module;, MOTION, object, oscillations;, pattern;, pedestrian, phase, Pixel, principle, representation;, sequence;, sequences;, SHAPE, system;},
	doi = {10.1109/ICIP.2005.1530190},
	author = {Yang Ran and Qinfen Zheng and Weiss, I. and Davis, Larry S. and Abd-Almageed, Wael and Liang Zhao}
}
@conference {15386,
	title = {Gate leakage current simulation by Boltzmann transport equation and its dependence on the gate oxide thickness},
	booktitle = {Simulation of Semiconductor Processes and Devices, 1999. SISPAD {\textquoteright}99. 1999 International Conference on},
	year = {1999},
	month = {1999///},
	pages = {247 - 250},
	abstract = {As device dimensions shrink toward 0.1 mu;m, gate oxides are becoming so thin that MOSFET gate leakage current and oxide degradation are becoming limiting issues. We provide a more rigorous way to calculate gate leakage current. To achieve this we build upon the Spherical Harmonic Method of modeling, which deterministically solves the Boltzmann equation for an entire device. The method gives the distribution function and is 1000 times faster than MC. Once the distribution function is calculated, the tunneling probability is derived from the first principle WKB method. The barrier lowering effect is accounted for by the method of image charges. We calculate gate leakage current as a function of DC bias. The thermionic and tunneling components are compared at different DC bias points. The dependence of gate leakage current on gate oxide thickness is simulated},
	keywords = {30, angstrom;60, angstrom;Boltzmann, Bias, calculations;leakage, charges;spherical, component;tunneling, current, currents;semiconductor, dependence;method, dependence;MOSFET;barrier, device, effect;distribution, equation;DC, equation;MOSFET;WKB, function;first, harmonic, image, leakage, lowering, method, method;gate, model;thermionic, models;tunnelling;, of, oxide, principle, probability;Boltzmann, simulation;gate, thickness, transport, WKB},
	doi = {10.1109/SISPAD.1999.799307},
	author = {Han,Zhiyi and Lin,Chung-Kai and Goldsman,N. and Mayergoyz, Issak D and Yu,S. and Stettler,M.}
}
