@conference {12517,
	title = {Enforcing integrability by error correction using l1-minimization},
	booktitle = {Computer Vision and Pattern Recognition, 2009. CVPR 2009. IEEE Conference on},
	year = {2009},
	month = {2009/06//},
	pages = {2350 - 2357},
	abstract = {Surface reconstruction from gradient fields is an important final step in several applications involving gradient manipulations and estimation. Typically, the resulting gradient field is non-integrable due to linear/non-linear gradient manipulations, or due to presence of noise/outliers in gradient estimation. In this paper, we analyze integrability as error correction, inspired from recent work in compressed sensing, particulary lscr<sub>0</sub> - lscr<sub>1</sub> equivalence. We propose to obtain the surface by finding the gradient field which best fits the corrupted gradient field in lscr<sub>1</sub> sense. We present an exhaustive analysis of the properties of lscr<sub>1</sub> solution for gradient field integration using linear algebra and graph analogy. We consider three cases: (a) noise, but no outliers (b) no-noise but outliers and (c) presence of both noise and outliers in the given gradient field. We show that lscr<sub>1</sub> solution performs as well as least squares in the absence of outliers. While previous lscr<sub>0</sub> - lscr<sub>1</sub> equivalence work has focused on the number of errors (outliers), we show that the location of errors is equally important for gradient field integration. We characterize the lscr<sub>1</sub> solution both in terms of location and number of outliers, and outline scenarios where lscr<sub>1</sub> solution is equivalent to lscr<sub>0</sub> solution. We also show that when lscr<sub>1</sub> solution is not able to remove outliers, the property of local error confinement holds: i.e., the errors do not propagate to the entire surface as in least squares. We compare with previous techniques and show that lscr<sub>1</sub> solution performs well across all scenarios without the need for any tunable parameter adjustments.},
	keywords = {-, algebra;lscr<sub>0</sub>, algebra;minimisation;, analogy;integrability;least, compressed, correction;gradient, equivalence;lscr<sub>1</sub>-minimization;noise-outlier;surface, estimation;gradient, field, integration;gradient, lscr<sub>1</sub>, manipulation;graph, methods;graph, reconstruction;error, reconstruction;linear, sensing;error, squares;linear, theory;image},
	doi = {10.1109/CVPR.2009.5206603},
	author = {Reddy, D. and Agrawal,A. and Chellapa, Rama}
}
@article {15391,
	title = {Nonlinear Resonant and Chaotic Dynamics in Microwave Assisted Magnetization Switching},
	journal = {Magnetics, IEEE Transactions on},
	volume = {45},
	year = {2009},
	month = {2009/10//},
	pages = {3950 - 3953},
	abstract = {The switching process of a uniformly magnetized magnetic nanoparticle is considered. The particle is subject to applied fields having both dc and linearly-polarized radio-frequency (RF) components. The possibility of using the RF power to obtain a reduced coercivity of the particle is related to the onset of chaotic magnetization dynamics for moderately low values of the RF field amplitude. Perturbation technique for the evaluation of the reduced coercive field is developed and applied to the microwave assisted switching of the particle. Numerical simulations confirm the predictions of the theory.},
	keywords = {amplitude;chaotic, components;magnetic, dynamical, dynamics;coercive, dynamics;numerical, field, field;coercivity;linearly-polarized, force;magnetic, magnetization, nanoparticle;microwave-assisted, particles;magnetic, radiofrequency, resonant, RF, simulations;perturbation, switching;nanoparticles;nonlinear, switching;nonlinear, systems;perturbation, technique;chaos;coercive, theory;},
	isbn = {0018-9464},
	doi = {10.1109/TMAG.2009.2023242},
	author = {d{\textquoteright}Aquino,M. and Serpico,C. and Bertotti,G. and Mayergoyz, Issak D and Bonin,R.}
}
@conference {13980,
	title = {Spherical Arrays Near Boundaries},
	booktitle = {Hands-Free Speech Communication and Microphone Arrays, 2008. HSCMA 2008},
	year = {2008},
	month = {2008/05//},
	pages = {1 - 1},
	abstract = {Summary form only given. Solid spherical microphone arrays are beginning to be used for purposes such as beamforming, sound field capture and as audio cameras. They rely on the scattering of sound off their surface to achieve their purpose. This behavior is significantly affected in the presence of boundaries (floors, walls, ceilings), and the edges and corners they form. Algorithms designed for array analysis in a free field will work erroneously in this situation. We describe adaptation of the spherical microphone analysis algorithms to constructively use the scattering off the boundaries to significantly improve array performance. We also assess the influence of walls on beamforming algorithms for regular spherical arrays. Both synthetic and experimental results are presented.},
	keywords = {analysis;audio, analysis;microphone, array, arrays;, arrays;sound, arrays;spherical, cameras;beamforming;solid, capture;spherical, field, microphone, spherical},
	doi = {10.1109/HSCMA.2008.4538675},
	author = {Duraiswami, Ramani and Gumerov, Nail A. and O{\textquoteright}Donovan,A.}
}
@article {15374,
	title = {A parallel-in-time method for the transient simulation of SOI devices with drain current overshoots},
	journal = {Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on},
	volume = {13},
	year = {1994},
	month = {1994/08//},
	pages = {1035 - 1044},
	abstract = {This paper presents a new parallel-in-time algorithm for the two dimensional transient simulation of SOI devices. With this approach, simulation in both space and time domains is performed in parallel As a result, the CPU time is reduced significantly from the conventional serial-in-time method. This new approach fully exploits the inherent parallelism of the finite difference formulation of the basic semiconductor device equations and the massively parallel architecture of SIMD computers. The space domain computations are inherently parallel due to the nature of our technique of solving the finite-difference equations. Time domain parallelism is achieved by shifting the potentials from previous time points to subsequent points one-step forward along the time axis with each Gummel iteration. This algorithm employs a fixed-point iteration technique, therefore a direct solution of matrix equations is avoided. The algorithm is especially suitable for the transient simulation of SOI devices that exhibit transient drain current overshoot. Numerical experiments show that the new parallel-in-time method is up to eight times faster than the conventional serial-in-time method in SOI transient simulations. The program is coded in CM Fortran for the Connection Machine},
	keywords = {2D, algorithms;semiconductor, analysis;transient, architecture;parallel-in-time, boundaries;silicon;time-domain, computations;time, computers;SOI, computing;finite, current, device, devices;drain, devices;parallel, difference, dimensional, domain, effect, engineering, equations;fixed-point, equations;space, field, Fortran;CPU, gate, iteration, iteration;SIMD, Machine;Gummel, method;semiconductor, methods;insulated, methods;metal-insulator-semiconductor, models;semiconductor-insulator, overshoots;finite-difference, Parallel, parallelism;transient, response;, simulation;CM, simulation;digital, simulation;electronic, simulation;two, technique;massively, time;Connection, transistors;iterative},
	isbn = {0278-0070},
	doi = {10.1109/43.298039},
	author = {Tai,G.-C. and Korman,C.E. and Mayergoyz, Issak D}
}
@article {15388,
	title = {Investigation of the threshold voltage of MOSFETs with position and potential-dependent interface trap distributions using a fixed-point iteration method},
	journal = {Electron Devices, IEEE Transactions on},
	volume = {37},
	year = {1990},
	month = {1990/04//},
	pages = {1031 - 1038},
	abstract = {Simulation results are presented for a MOSFET with position- and energy- (potential-) dependent interface trap distributions that may be typical for devices subjected to interface-trap-producing processes such as hot-electron degradation. The interface-trap distribution is modeled as a Gaussian peak at a given position along the channel, and the energy dependence is derived from <e1>C</e1>-<e1>V</e1> measurements from an MOS capacitor exposed to ionizing radiation. A novel fixed-point technique is used to solve the two-dimensional boundary-value problem. The technique is shown to be globally convergent for arbitrary distributions of interface traps. A comparison of the convergence properties of the Newton and fixed-point methods is presented, and it is shown that for some important cases the Newton technique fails to converge while the fixed-point technique converges with a geometric convergence rate},
	keywords = {boundary-value, C-V, carriers;insulated, characteristics;Gaussian, Convergence, convergence;hot-electron, degradation;position, dependence;fixed-point, dependent, device, distribution;potential-dependent, distributions;simulation;threshold, effect, electron, field, gate, interface, iteration, method;fixed-point, methods;hot, methods;semiconductor, models;, numerical, of, peak;MOSFET;energy, problem;boundary-value, problems;convergence, rate;global, states;iterative, technique;geometric, transistors;interface, trap, voltage;two-dimensional},
	isbn = {0018-9383},
	doi = {10.1109/16.52438},
	author = {Gaitan,M. and Mayergoyz, Issak D and Korman,C.E.}
}
