@conference {18922,
	title = {The Life Game: Cognitive Strategies for Repeated Stochastic Games},
	year = {2011},
	month = {2011/10//},
	pages = {95 - 102},
	abstract = {Standard models in bio-evolutionary game theory involve repetitions of a single stage game (e.g., the Prisoner{\textquoteright}s Dilemma or the Stag Hunt); but it is clear that repeatedly playing the same stage game is not an accurate model of most individuals{\textquoteright} lives. Rather, individuals{\textquoteright} interactions with others correspond to many different kinds of stage games. In this work, we concentrate on discovering behavioral strategies that are successful for the life game, in which the stage game is chosen stochastically at each iteration. We present a cognitive agent model based on Social Value Orientation (SVO) theory. We provide extensive evaluations of our model{\textquoteright}s performance, both against standard agents from the game theory literature and against a large set of life-game agents written by students in two different countries. Our empirical results suggest that for life-game strategies to be successful in environments with such agents, it is important (i) to be unforgiving with respect to trust behavior and (ii) to use adaptive, fine-grained opponent models of the other agents.},
	keywords = {adaptive model, behavioral strategy, bioevolutionary game theory, cognitive agent model, fine-grained opponent model, game theory, iteration, iterative methods, life game, prisoner{\textquoteright}s dilemma, repeated stochastic games, social value orientation theory, stag hunt, stage game, Stochastic processes, trust behavior},
	doi = {10.1109/PASSAT/SocialCom.2011.62},
	author = {Cheng,Kan-Leung and Zuckerman,I. and Nau, Dana S. and Golbeck,J.}
}
@conference {12394,
	title = {Modeling image processing systems with homogeneous parameterized dataflow graphs},
	booktitle = {Acoustics, Speech, and Signal Processing, 2005. Proceedings. (ICASSP {\textquoteright}05). IEEE International Conference on},
	volume = {5},
	year = {2005},
	month = {2005/03//},
	pages = {v/133 - v/136 Vol. 5 - v/133 - v/136 Vol. 5},
	abstract = {We describe a new dataflow model called homogeneous parameterized dataflow (HPDF). This form of dynamic dataflow graph takes advantage of the fact that in a large number of image processing applications, data production and consumption rates, though dynamic, are equal across graph edges for any particular iteration, which leads to a homogeneous rate of actor execution, even though data production and consumption values are dynamic and vary across graph edges. We discuss existing dataflow models and formulate in detail the HPDF model. We develop examples of applications that are described naturally in terms of HPDF semantics and present experimental results that demonstrate the efficacy of the HPDF approach.},
	keywords = {data consumption, data flow graphs, data production, dynamic dataflow graph, graph edges, homogeneous parameterized dataflow graphs, IMAGE PROCESSING, image processing system modeling, iteration, iterative methods},
	doi = {10.1109/ICASSP.2005.1416258},
	author = {Sen,Mainak and Bhattacharyya, Shuvra S. and Lv,Tiehan and Wolf,W.}
}
@conference {12687,
	title = {Robust ego-motion estimation and 3D model refinement using depth based parallax model},
	booktitle = {Image Processing, 2004. ICIP {\textquoteright}04. 2004 International Conference on},
	volume = {4},
	year = {2004},
	month = {2004/10//},
	pages = {2483 - 2486 Vol. 4 - 2483 - 2486 Vol. 4},
	abstract = {We present an iterative algorithm for robustly estimating the ego-motion and refining and updating a coarse, noisy and partial depth map using a depth based parallax model and brightness derivatives extracted from an image pair. Given a coarse, noisy and partial depth map acquired by a range-finder or obtained from a Digital Elevation Map (DFM), we first estimate the ego-motion by combining a global ego-motion constraint and a local brightness constancy constraint. Using the estimated camera motion and the available depth map estimate, motion of the 3D points is compensated. We utilize the fact that the resulting surface parallax field is an epipolar field and knowing its direction from the previous motion estimates, estimate its magnitude and use it to refine the depth map estimate. Instead of assuming a smooth parallax field or locally smooth depth models, we locally model the parallax magnitude using the depth map, formulate the problem as a generalized eigen-value analysis and obtain better results. In addition, confidence measures for depth estimates are provided which can be used to remove regions with potentially incorrect (and outliers in) depth estimates for robustly estimating ego-motion in the next iteration. Results on both synthetic and real examples are presented.},
	keywords = {3D, algorithm;, analysis;, and, based, camera;, coarse, compensation;, DEM;, depth, digital, ego-motion, eigen-value, eigenfunctions;, eigenvalues, ELEVATION, epipolar, estimation;, extraction;, feature, field;, iteration, iterative, map;, method;, methods;, model, model;, MOTION, parallax, partial, range-finding;, refinement;, refining;, surface},
	doi = {10.1109/ICIP.2004.1421606},
	author = {Agrawala, Ashok K. and Chellapa, Rama}
}
@article {15374,
	title = {A parallel-in-time method for the transient simulation of SOI devices with drain current overshoots},
	journal = {Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on},
	volume = {13},
	year = {1994},
	month = {1994/08//},
	pages = {1035 - 1044},
	abstract = {This paper presents a new parallel-in-time algorithm for the two dimensional transient simulation of SOI devices. With this approach, simulation in both space and time domains is performed in parallel As a result, the CPU time is reduced significantly from the conventional serial-in-time method. This new approach fully exploits the inherent parallelism of the finite difference formulation of the basic semiconductor device equations and the massively parallel architecture of SIMD computers. The space domain computations are inherently parallel due to the nature of our technique of solving the finite-difference equations. Time domain parallelism is achieved by shifting the potentials from previous time points to subsequent points one-step forward along the time axis with each Gummel iteration. This algorithm employs a fixed-point iteration technique, therefore a direct solution of matrix equations is avoided. The algorithm is especially suitable for the transient simulation of SOI devices that exhibit transient drain current overshoot. Numerical experiments show that the new parallel-in-time method is up to eight times faster than the conventional serial-in-time method in SOI transient simulations. The program is coded in CM Fortran for the Connection Machine},
	keywords = {2D, algorithms;semiconductor, analysis;transient, architecture;parallel-in-time, boundaries;silicon;time-domain, computations;time, computers;SOI, computing;finite, current, device, devices;drain, devices;parallel, difference, dimensional, domain, effect, engineering, equations;fixed-point, equations;space, field, Fortran;CPU, gate, iteration, iteration;SIMD, Machine;Gummel, method;semiconductor, methods;insulated, methods;metal-insulator-semiconductor, models;semiconductor-insulator, overshoots;finite-difference, Parallel, parallelism;transient, response;, simulation;CM, simulation;digital, simulation;electronic, simulation;two, technique;massively, time;Connection, transistors;iterative},
	isbn = {0278-0070},
	doi = {10.1109/43.298039},
	author = {Tai,G.-C. and Korman,C.E. and Mayergoyz, Issak D}
}
@article {15388,
	title = {Investigation of the threshold voltage of MOSFETs with position and potential-dependent interface trap distributions using a fixed-point iteration method},
	journal = {Electron Devices, IEEE Transactions on},
	volume = {37},
	year = {1990},
	month = {1990/04//},
	pages = {1031 - 1038},
	abstract = {Simulation results are presented for a MOSFET with position- and energy- (potential-) dependent interface trap distributions that may be typical for devices subjected to interface-trap-producing processes such as hot-electron degradation. The interface-trap distribution is modeled as a Gaussian peak at a given position along the channel, and the energy dependence is derived from <e1>C</e1>-<e1>V</e1> measurements from an MOS capacitor exposed to ionizing radiation. A novel fixed-point technique is used to solve the two-dimensional boundary-value problem. The technique is shown to be globally convergent for arbitrary distributions of interface traps. A comparison of the convergence properties of the Newton and fixed-point methods is presented, and it is shown that for some important cases the Newton technique fails to converge while the fixed-point technique converges with a geometric convergence rate},
	keywords = {boundary-value, C-V, carriers;insulated, characteristics;Gaussian, Convergence, convergence;hot-electron, degradation;position, dependence;fixed-point, dependent, device, distribution;potential-dependent, distributions;simulation;threshold, effect, electron, field, gate, interface, iteration, method;fixed-point, methods;hot, methods;semiconductor, models;, numerical, of, peak;MOSFET;energy, problem;boundary-value, problems;convergence, rate;global, states;iterative, technique;geometric, transistors;interface, trap, voltage;two-dimensional},
	isbn = {0018-9383},
	doi = {10.1109/16.52438},
	author = {Gaitan,M. and Mayergoyz, Issak D and Korman,C.E.}
}
