@article {15408,
	title = {Three-Dimensional Hydrodynamic Modeling of MOSFET Devices},
	journal = {VLSI Design},
	volume = {6},
	year = {1998},
	month = {1998///},
	pages = {261 - 265},
	abstract = {The hydrodynamic (HD) model of semiconductor devices is solved numerically inthree-dimensions (3-D) for the MOSFET device. The numerical instabilities of the HD model
are analyzed to develop a stable discretization. The formulation is stabilized by using a new,
higher-order discretization for the relaxation-time approximation (RTA) term of the
energy-balance (EB) equation. The developed formulation is used to model the MOSFET.
},
	isbn = {1065-514X, 1563-5171},
	doi = {10.1155/1998/60859},
	url = {http://www.hindawi.com/journals/vlsi/1998/060859/abs/},
	author = {Kerr,Daniel C. and Goldsman,Neil and Mayergoyz, Issak D}
}
