@article {15396,
	title = {Numerical simulation of small-signal microwave performance of 4H{\textendash}SiC MESFET},
	journal = {Solid-State Electronics},
	volume = {44},
	year = {2000},
	month = {2000/07/01/},
	pages = {1281 - 1287},
	abstract = {Small-signal high frequency characteristics of 4H{\textendash}SiC MESFET has been studied by using two-dimensional numerical drift-diffusion model in frequency domain. Non-ideal Schottky boundary conditions have been introduced that take into account a thin interfacial layer and interface energy states. It has been demonstrated that the 10 dB/dec small-signal current gain roll-off can be attributed to the existence of high density interface states at the metal{\textendash}semiconductor interface. It has been found that as the gate length is reduced to 0.1 μm, fT and fmax may reach as high as 30 and 62 GHz, respectively.},
	isbn = {0038-1101},
	doi = {10.1016/S0038-1101(00)00025-3},
	url = {http://www.sciencedirect.com/science/article/pii/S0038110100000253},
	author = {Huang,Mingwei and Mayergoyz, Issak D and Goldsman,Neil}
}
