Publications
1999. Gate leakage current simulation by Boltzmann transport equation and its dependence on the gate oxide thickness. Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on. :247-250.
1994. A parallel-in-time method for the transient simulation of SOI devices with drain current overshoots. Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on. 13(8):1035-1044.