%0 Journal Article %J VLSI Design %D 1998 %T Three-Dimensional Hydrodynamic Modeling of MOSFET Devices %A Kerr,Daniel C. %A Goldsman,Neil %A Mayergoyz, Issak D %X The hydrodynamic (HD) model of semiconductor devices is solved numerically inthree-dimensions (3-D) for the MOSFET device. The numerical instabilities of the HD model are analyzed to develop a stable discretization. The formulation is stabilized by using a new, higher-order discretization for the relaxation-time approximation (RTA) term of the energy-balance (EB) equation. The developed formulation is used to model the MOSFET. %B VLSI Design %V 6 %P 261 - 265 %8 1998/// %@ 1065-514X, 1563-5171 %G eng %U http://www.hindawi.com/journals/vlsi/1998/060859/abs/ %N 1-4 %R 10.1155/1998/60859