%0 Conference Paper
%B Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
%D 1999
%T Advances in spherical harmonic device modeling: calibration and nanoscale electron dynamics
%A Lin,Chung-Kai
%A Goldsman,N.
%A Mayergoyz, Issak D
%A Aronowitz,S.
%A Belova,N.
%K Boltzmann
%K characteristics;SHBTE
%K current;surface
%K device
%K dynamics;spherical
%K electron
%K equation;calibration;semiconductor
%K equation;I-V
%K harmonic
%K model;substrate
%K models;surface
%K scattering;
%K scattering;Boltzmann
%K simulation;calibration;nanoscale
%K transport
%X Improvements in the Spherical Harmonic (SH) method for solving Boltzmann Transport Equation (BTE) are presented. The simulation results provide the same physical detail as analytical band Monte Carlo (MC) calculations, and are obtained approximately a thousand times faster. A new physical model for surface scattering has also been developed. As a result, the SHBTE model achieves calibration for a complete process of I-V characteristics and substrate current consistently for the first time
%B Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
%P 167 - 170
%8 1999///
%G eng
%R 10.1109/SISPAD.1999.799287