TY - CONF T1 - Advances in spherical harmonic device modeling: calibration and nanoscale electron dynamics T2 - Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on Y1 - 1999 A1 - Lin,Chung-Kai A1 - Goldsman,N. A1 - Mayergoyz, Issak D A1 - Aronowitz,S. A1 - Belova,N. KW - Boltzmann KW - characteristics;SHBTE KW - current;surface KW - device KW - dynamics;spherical KW - electron KW - equation;calibration;semiconductor KW - equation;I-V KW - harmonic KW - model;substrate KW - models;surface KW - scattering; KW - scattering;Boltzmann KW - simulation;calibration;nanoscale KW - transport AB - Improvements in the Spherical Harmonic (SH) method for solving Boltzmann Transport Equation (BTE) are presented. The simulation results provide the same physical detail as analytical band Monte Carlo (MC) calculations, and are obtained approximately a thousand times faster. A new physical model for surface scattering has also been developed. As a result, the SHBTE model achieves calibration for a complete process of I-V characteristics and substrate current consistently for the first time JA - Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on M3 - 10.1109/SISPAD.1999.799287 ER -