TY - JOUR
T1 - A parallel-in-time method for the transient simulation of SOI devices with drain current overshoots
JF - Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Y1 - 1994
A1 - Tai,G.-C.
A1 - Korman,C.E.
A1 - Mayergoyz, Issak D
KW - 2D
KW - algorithms;semiconductor
KW - analysis;transient
KW - architecture;parallel-in-time
KW - boundaries;silicon;time-domain
KW - computations;time
KW - computers;SOI
KW - computing;finite
KW - current
KW - device
KW - devices;drain
KW - devices;parallel
KW - difference
KW - dimensional
KW - domain
KW - effect
KW - engineering
KW - equations;fixed-point
KW - equations;space
KW - field
KW - Fortran;CPU
KW - gate
KW - iteration
KW - iteration;SIMD
KW - Machine;Gummel
KW - method;semiconductor
KW - methods;insulated
KW - methods;metal-insulator-semiconductor
KW - models;semiconductor-insulator
KW - overshoots;finite-difference
KW - Parallel
KW - parallelism;transient
KW - response;
KW - simulation;CM
KW - simulation;digital
KW - simulation;electronic
KW - simulation;two
KW - technique;massively
KW - time;Connection
KW - transistors;iterative
AB - This paper presents a new parallel-in-time algorithm for the two dimensional transient simulation of SOI devices. With this approach, simulation in both space and time domains is performed in parallel As a result, the CPU time is reduced significantly from the conventional serial-in-time method. This new approach fully exploits the inherent parallelism of the finite difference formulation of the basic semiconductor device equations and the massively parallel architecture of SIMD computers. The space domain computations are inherently parallel due to the nature of our technique of solving the finite-difference equations. Time domain parallelism is achieved by shifting the potentials from previous time points to subsequent points one-step forward along the time axis with each Gummel iteration. This algorithm employs a fixed-point iteration technique, therefore a direct solution of matrix equations is avoided. The algorithm is especially suitable for the transient simulation of SOI devices that exhibit transient drain current overshoot. Numerical experiments show that the new parallel-in-time method is up to eight times faster than the conventional serial-in-time method in SOI transient simulations. The program is coded in CM Fortran for the Connection Machine
VL - 13
SN - 0278-0070
CP - 8
M3 - 10.1109/43.298039
ER -