TY - JOUR
T1 - 2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations
JF - Electron Devices, IEEE Transactions on
Y1 - 1997
A1 - Liang,Wenchao
A1 - Goldsman,N.
A1 - Mayergoyz, Issak D
A1 - Oldiges,P.J.
KW - 2D
KW - characteristics;LDD
KW - concentration;electron
KW - concentration;hole-continuity
KW - density;electron-hole
KW - density;impact
KW - device
KW - distribution
KW - effects;surface
KW - equation;collision
KW - equation;I-V
KW - equation;MOSFET;electron
KW - equations;impact
KW - equations;semiconductor
KW - function;electron
KW - generation;electron-hole
KW - harmonic
KW - integral;electron
KW - ionisation;integral
KW - ionization;self-consistent
KW - method;Boltzmann
KW - method;surface
KW - modeling;Boltzmann
KW - models;surface
KW - MOSFET
KW - MOSFET;Poisson
KW - pair
KW - potential;hole
KW - recombination;electrostatic
KW - recombination;hole
KW - scattering;
KW - scattering;two-dimensional
KW - simulation
KW - solution;spherical
KW - submicron
KW - temperature;electron-hole
KW - transport
AB - We present a new two-dimensional (2-D) MOSFET simulation method achieved by directly solving the Boltzmann transport equation for electrons, the hole-current continuity equation, and the Poisson equation self-consistently. The spherical harmonic method is used for the solution of the Boltzmann equation. The solution directly gives the electron distribution function, electrostatic potential, and the hole concentration for the entire 2-D MOSFET. Average quantities such as electron concentration and electron temperature are obtained directly from the integration of the distribution function. The collision integral is formulated to arbitrarily high spherical harmonic order, and new collision terms are included that incorporate effects of surface scattering and electron-hole pair recombination/generation. I-V characteristics, which agree with experiment, are calculated directly from the distribution function for an LDD submicron MOSFET. Electron-hole pair generation due to impact ionization is also included by direct application of the collision integral. The calculations are efficient enough for day-to-day engineering design on workstation-type computers
VL - 44
SN - 0018-9383
CP - 2
M3 - 10.1109/16.557713
ER -