@conference {15376,
	title = {Advances in spherical harmonic device modeling: calibration and nanoscale electron dynamics},
	booktitle = {Simulation of Semiconductor Processes and Devices, 1999. SISPAD {\textquoteright}99. 1999 International Conference on},
	year = {1999},
	month = {1999///},
	pages = {167 - 170},
	abstract = {Improvements in the Spherical Harmonic (SH) method for solving Boltzmann Transport Equation (BTE) are presented. The simulation results provide the same physical detail as analytical band Monte Carlo (MC) calculations, and are obtained approximately a thousand times faster. A new physical model for surface scattering has also been developed. As a result, the SHBTE model achieves calibration for a complete process of I-V characteristics and substrate current consistently for the first time},
	keywords = {Boltzmann, characteristics;SHBTE, current;surface, device, dynamics;spherical, electron, equation;calibration;semiconductor, equation;I-V, harmonic, model;substrate, models;surface, scattering;, scattering;Boltzmann, simulation;calibration;nanoscale, transport},
	doi = {10.1109/SISPAD.1999.799287},
	author = {Lin,Chung-Kai and Goldsman,N. and Mayergoyz, Issak D and Aronowitz,S. and Belova,N.}
}
@article {15388,
	title = {Investigation of the threshold voltage of MOSFETs with position and potential-dependent interface trap distributions using a fixed-point iteration method},
	journal = {Electron Devices, IEEE Transactions on},
	volume = {37},
	year = {1990},
	month = {1990/04//},
	pages = {1031 - 1038},
	abstract = {Simulation results are presented for a MOSFET with position- and energy- (potential-) dependent interface trap distributions that may be typical for devices subjected to interface-trap-producing processes such as hot-electron degradation. The interface-trap distribution is modeled as a Gaussian peak at a given position along the channel, and the energy dependence is derived from <e1>C</e1>-<e1>V</e1> measurements from an MOS capacitor exposed to ionizing radiation. A novel fixed-point technique is used to solve the two-dimensional boundary-value problem. The technique is shown to be globally convergent for arbitrary distributions of interface traps. A comparison of the convergence properties of the Newton and fixed-point methods is presented, and it is shown that for some important cases the Newton technique fails to converge while the fixed-point technique converges with a geometric convergence rate},
	keywords = {boundary-value, C-V, carriers;insulated, characteristics;Gaussian, Convergence, convergence;hot-electron, degradation;position, dependence;fixed-point, dependent, device, distribution;potential-dependent, distributions;simulation;threshold, effect, electron, field, gate, interface, iteration, method;fixed-point, methods;hot, methods;semiconductor, models;, numerical, of, peak;MOSFET;energy, problem;boundary-value, problems;convergence, rate;global, states;iterative, technique;geometric, transistors;interface, trap, voltage;two-dimensional},
	isbn = {0018-9383},
	doi = {10.1109/16.52438},
	author = {Gaitan,M. and Mayergoyz, Issak D and Korman,C.E.}
}
