@article {18006, title = {Electron beam and optical proximity effect reduction for nanolithography: New results}, journal = {Journal of Vacuum Science \& Technology B}, volume = {25}, year = {2007}, month = {2007///}, pages = {2288 - 2294}, abstract = {Proximity effect correction by dose modulation is widely practiced in electron-beam lithography. Optical proximity control is also possible using a combination of shape adjustment and phase control. Assigning {\textquotedblleft}the right{\textquotedblright} dose (or fill factor and phase for optics) is a well known mathematical inverse problem. Linear programming, by definition, is the appropriate method for determining dose. In the past, the technique was too slow for full-scale implementation in mask making. Here, the authors discuss how recent developments in computer speed and architecture have improved the prospects for full-scale implementation. In addition, the authors discuss some numerical techniques, analogous to gridding and relaxation, that make linear programming more attractive in mask making.}, keywords = {electron beam lithography, Linear programming, masks, nanolithography, proximity effect (lithography)}, doi = {10.1116/1.2806967}, url = {http://link.aip.org/link/?JVB/25/2288/1}, author = {Peckerar,Martin and Sander,David and Srivastava,Ankur and Foli,Adakou and Vishkin, Uzi} }