@article {15400,
	title = {Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices},
	journal = {Solid-State Electronics},
	volume = {47},
	year = {2003},
	month = {2003/11//},
	pages = {2055 - 2061},
	abstract = {The random doping-induced fluctuations of subthreshold characteristics in MOSFET devices are analyzed. A technique for the computations of sensitivity coefficients and variances of subthreshold parameters is presented and applied to the computation of fluctuations of subthreshold current and gate-voltage swing. This technique is based on the linearization of transport equations with respect to the fluctuating quantities. It is computationally much more efficient than purely {\textquotedblleft}statistical{\textquotedblright} methods (Monte-Carlo methods) that are based on the simulations of a large number of devices with different doping realizations. The numerical implementation of this technique is discussed and numerous computational results are presented.},
	keywords = {Fluctuations, Mismatch, MOSFET, Sensitivity analysis, Statistics, Submicron devices},
	isbn = {0038-1101},
	doi = {10.1016/S0038-1101(03)00236-3},
	url = {http://www.sciencedirect.com/science/article/pii/S0038110103002363},
	author = {Andrei,Petru and Mayergoyz, Issak D}
}
