@article {15362,
	title = {Hydrodynamic Device Simulation with New State Variables Specially Chosen a Block Gummel Iterative Approach},
	journal = {VLSI DESIGN},
	volume = {6},
	year = {1998},
	month = {1998///},
	pages = {191 - 195},
	abstract = {A new numerical formulation for solving the hydrodynamic model of semiconductor devicesis presented. Themethod is based on using new variables to transform the conventional
hydrodynamic equations into forms which facilitatenumerical evaluation with a block Gum-
mel approach. To demonstrate the new method, we apply it to model a 0.35 wn 2-D LDD
MOSFET, where robust convergence properties are observed.
},
	author = {Liang,W. and Kerr,D. C. and Goldsman,N. and Mayergoyz, Issak D}
}
