@article {15359,
	title = {3-D Device Simulation Using Intelligent Solution Method Control},
	journal = {VLSI DESIGN},
	volume = {6},
	year = {1998},
	month = {1998///},
	pages = {267 - 272},
	abstract = {In this paper, a hybrid solution method is implemented for solving the semiconductor trans-port equations. The hybrid "local Newton" method consists of a combination of the fixed-
point iteration (FPI) and Newton{\textquoteright}s methods. The FPI technique is nearly ideally suitedto
solving large, 3-D systems of semiconductor equations on machines of limited computer
memory however,it has certain limitations. This motivates the local Newton method, which
coordinates the use of both the FPI and Newton{\textquoteright}s methods, for convergence faster than either
method alone.
},
	author = {Kerr,D. C. and Mayergoyz, Issak D}
}
